Online Archive of University of Virginia Scholarship
Impurity trapping during crystal growth197 views
Author
Myerson, Allan Stuart, Chemical Engineering, University of Virginia
Advisors
Kirwan, Donald, School of Engineering and Applied Science, University of Virginia
John E., Gibson, School of Engineering and Applied Science, University of Virginia
Abstract
A computer simulation of dendritic crystal growth was developed and used to derive a relationship between solution-trapping and system and process parameters during crystal growth. The relation predicts that trapping will increase with increasing crystal growth velocity and decreasing positive and negative temperature gradients.
A flow crystallizer was used to experimentally study the growth of CaSoٖ₄, potassium aluminum sulfate, and NaCl from aqueous solution. Significant amounts of trapped water (up to 90 mole percent) were found in all systems. These data as well as data from the literature for organic, metallic, and inorganic systems were used to test the computer-derived relation which was found to correlate the data well.
The computer simulation was also used to simulate experiments for compounds that have been experimentally studied. The results for the constants in the predictive equation were within an order-of-magnitude of those obtained from experimental data.
Degree
PHD (Doctor of Philosophy)
Keywords
Crystallization
Language
English
Rights
All rights reserved (no additional license for public reuse)
Myerson, Allan Stuart. Impurity trapping during crystal growth. University of Virginia, Chemical Engineering, PHD (Doctor of Philosophy), 1977-01-01, https://doi.org/10.18130/7n13-yh85.