Online Archive of University of Virginia Scholarship
Deep UV Photolithography and Characterization of Doped Silicon and Endohedeal Fullerenes by Raman Spectroscopy430 views
Author
Burke, Brian Gregory, Department of Physics, University of Virginia
Advisors
Burke, Brian, Department of Physics, University of Virginia
Abstract
This work addresses economical alternatives to electron beam lithography (EBL) by deep ultra-violet (UV) photolithography and proposes surface enhanced transmission techniques for direct-write lithography, investigates surface doping in silicon by Raman spectroscopy for the development of surface scattering field-effect transistors (SurFETs), characterizes endohedral fullerenes (endofullerenes) by Raman and inelastic electron tunneling spectroscopy (IETS) for applications in molecular electronics, organic photovoltaics, and magneto-electronic devices.
Note: Abstract extracted from PDF text
Degree
PHD (Doctor of Philosophy)
Language
English
Rights
All rights reserved (no additional license for public reuse)
Burke, Brian Gregory. Deep UV Photolithography and Characterization of Doped Silicon and Endohedeal Fullerenes by Raman Spectroscopy. University of Virginia, Department of Physics, PHD (Doctor of Philosophy), 2010-05-01, https://doi.org/10.18130/V3J869.
