Deep UV Photolithography and Characterization of Doped Silicon and Endohedeal Fullerenes by Raman Spectroscopy

This work addresses economical alternatives to electron beam lithography (EBL) by deep ultra-violet (UV) photolithography and proposes surface enhanced transmission techniques for direct-write lithography, investigates surface doping in silicon by Raman spectroscopy for the development of surface scattering field-effect transistors (SurFETs), characterizes endohedral fullerenes (endofullerenes) by Raman and inelastic electron tunneling spectroscopy (IETS) for applications in molecular electronics, organic photovoltaics, and magneto-electronic devices.

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