Deep UV Photolithography and Characterization of Doped Silicon and Endohedeal Fullerenes by Raman Spectroscopy
Burke, Brian Gregory, Department of Physics, University of Virginia
Burke, Brian, Department of Physics, University of Virginia
This work addresses economical alternatives to electron beam lithography (EBL) by deep ultra-violet (UV) photolithography and proposes surface enhanced transmission techniques for direct-write lithography, investigates surface doping in silicon by Raman spectroscopy for the development of surface scattering field-effect transistors (SurFETs), characterizes endohedral fullerenes (endofullerenes) by Raman and inelastic electron tunneling spectroscopy (IETS) for applications in molecular electronics, organic photovoltaics, and magneto-electronic devices.
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PHD (Doctor of Philosophy)
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