Reliability of Planar GaAs Schottky Diodes
Bowers, Jodi L., Department of Electrical Engineering, University of Virginia
Crowe, Thomas, Department of Electrical and Computer Engineering, University of Virginia
Carlson, W, Department of Engineering and Society, University of Virginia
Jones, Stephen H., Department of Electrical and Computer Engineering, University of Virginia
Johnson, Barry, Department of Electrical and Computer Engineering, University of Virginia
This research focuses on the gathering and analysis of accelerated life test data for planar GaAs Schottky diodes fabricated at the University of Virginia. Reliability estimates are desired by users who wish to operate diodes in a space environment. Because mission times of several years are planned, accelerated life testing proved necessary. Such testing involves the application of some failure accelerating stress to the devices in order to shorten their lifetimes. In this case, elevated temperature served as the accelerating stress, causing the diodes' current voltage characteristics to degrade. Two batches of diodes, balanced mixers (SD2T6) and single anode diodes (E02PR2526), were evaluated at temperatures from 125° C to 200° C. Fitting the life data with the Arrhenius-Log normal model allows extrapolation to lower temperatures, providing estimates of the expected lifetime distributions at normal operating temperatures.
MS (Master of Science)
accelerated life test, GaAs Schotty, diodes
English
All rights reserved (no additional license for public reuse)
1993/05/01
